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Investigation of Magnetoresistance in Crystalline Semiconductors in the Metal–Insulator Transition Region under Hydrostatic Compression
Author(s) -
Daunov M. I.,
Kamilov I. K.,
Magomedov A. B.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<553::aid-pssb553>3.0.co;2-s
Subject(s) - magnetoresistance , condensed matter physics , materials science , semiconductor , metal–insulator transition , conductivity , electrical resistivity and conductivity , transverse plane , metal , magnetic field , chemistry , physics , optoelectronics , metallurgy , structural engineering , quantum mechanics , engineering
The behavior of the transverse magnetoresistance in a crystalline semiconductor in the region of transition from non‐activated conductivity to variable range hopping (VRH) conductivity with irreversible change of the localization radius has been studied. The heavily doped, compensated, quasi‐gapless semiconductor p‐CdSnAs 2 〈Cu〉 was selected as a model. The interest was extracted from the experimental data on the temperature dependence of the transverse magnetoresistance in the 2 to 77.6 K range, for fields up to 15 kOe and pressures up to 1.5 GPa.