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The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 μm InGaAsP Quantum Well Semiconductor Diode Lasers
Author(s) -
Phillips A. F.,
Sweeney S. J.,
Adams A. R.,
Thijs P. J. A.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<513::aid-pssb513>3.0.co;2-7
Subject(s) - hydrostatic pressure , auger effect , lasing threshold , diode , laser , quantum well , semiconductor , semiconductor laser theory , atomic physics , materials science , auger , photon energy , current (fluid) , optoelectronics , photon , physics , optics , thermodynamics
We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 μm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases. We have also measured the temperature dependence of the threshold current from 90 to 350 K. Near 170 K the characteristic temperature T 0 goes through a maximum value at a «breakpoint» temperature T B . By comparison, in 1.5 μm lasers the value of T B occurs near 130 K. This indicates that Auger recombination is less significant in the 1.3 μm than in the 1.5 μm devices in agreement with the high pressure observations.