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Lateral Transport in Strained SiGe Quantum Wells Doped with Boron
Author(s) -
Kagan M. S.,
Altukhov I. V.,
Korolev K. A.,
Orlov D. V.,
Sinis V. P.,
Thomas S. G.,
Wang K. L.,
Yassievich I. N.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<495::aid-pssb495>3.0.co;2-8
Subject(s) - condensed matter physics , quantum tunnelling , doping , acceptor , conductivity , valence (chemistry) , materials science , boron , quantum well , activation energy , excitation , chemistry , physics , laser , organic chemistry , quantum mechanics , optics
Abstract The temperature dependence of conductivity and hole mobility in boron doped SiGe quantum well structures was studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two‐stage excitation including thermal activation of holes from the ground to strain‐split B states following by hole tunneling into the valence band. Inclining the valence bands of investigated QW structures makes possible to find the energy splitting of acceptor levels by strain from the temperature dependence of conductivity.