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Enhancement of 2D → 2D Tunneling by Γ–X Z Mixing in GaAs/AlAs Resonant Tunneling Structures at High Pressure
Author(s) -
Im Hyunsik,
Klipstein P. C.,
Smith J. M.,
Grey R.,
Hill G.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<489::aid-pssb489>3.0.co;2-x
Subject(s) - quantum tunnelling , condensed matter physics , heterojunction , hydrostatic pressure , quantum well , mixing (physics) , scanning tunneling spectroscopy , resonant tunneling diode , transverse plane , physics , chemistry , laser , quantum mechanics , thermodynamics , structural engineering , engineering
We have investigated the 2D → 2D resonant tunneling in coupled X‐band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D → 2D resonant tunneling between confined transverse X X,Y states but not between longitudinal X Z states. In this paper, we demonstrate the existence of such resonant tunneling in samples with very thin well and barrier layers. The existence of detectable 2D → 2D resonant tunneling between X Z states, even in a structure with a barrier thickness of 40 Å, is striking. However, by modelling the transport in terms of quantum beats between symmetric and anti‐symmetric double well states, we show that Γ–X Z mixing can produce enhancements of up to ≈10 2 .