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Evidence of Weak Localization in a Two‐Dimensional Electron Gas from Studies of Pressure‐Induced Semimetal—Semiconductor—Insulator Transitions in GaSb/InAs/GaSb Quantum Wells
Author(s) -
Dizhur E. M.,
Voronovsky A. N.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<449::aid-pssb449>3.0.co;2-c
Subject(s) - condensed matter physics , magnetoresistance , metal–insulator transition , insulator (electricity) , semiconductor , quantum well , electron , semimetal , weak localization , fermi gas , materials science , physics , magnetic field , metal , optoelectronics , band gap , optics , quantum mechanics , metallurgy , laser
Previously reported experimental data on the pressure dependence of quasi‐two‐dimensional electron transport in GaSb/InAs/GaSb quantum wells revealed a negative magnetoresistance region (NMR) that appears after transition from the semimetallic to the semiconducting regime, and that persists under pressure up to the vicinity of metal–insulator transition. This report is an attempt to treat this phenomenon in terms of weak localization in the 2D system.