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Compression Mechanisms in Highly Anisotropic Semiconductors
Author(s) -
Hsueh H. C.,
Crain J.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<365::aid-pssb365>3.0.co;2-o
Subject(s) - materials science , raman spectroscopy , semiconductor , compression (physics) , anisotropy , hydrostatic pressure , hydrostatic equilibrium , diffraction , ab initio quantum chemistry methods , condensed matter physics , molecular vibration , chemical physics , molecular physics , composite material , chemistry , molecule , optics , optoelectronics , thermodynamics , physics , organic chemistry , quantum mechanics
We examine in detail the effect of hydrostatic compression on anisotropic semiconductors which, at ambient conditions, are characterised by the coexistence of both weak and strong cohesive forces. We focus on elucidating the response to compression of the structural, vibrational and electronic properties in quasi‐two‐dimensional layered materials and quasi‐molecular solids. Results for layered IV–VI semiconductors (GeS and GeSe) and members of the quasi‐molecular Group‐V metal triiodides AsI 3 are reported. Our methodology combines X‐ray powder diffraction, Raman spectroscopy and ab initio electronic structure simulations. We demonstrate that compression in this class of material leads to complex compression mechanisms favouring more isotropically bonded phases, to gradual breakdown of low‐frequency rigid unit vibrations and to unusual electron charge transfer effects which are reflected in non‐monotonic variations of vibrational frequencies with pressure.