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Stress Induced Exciton Mixing in Quantum Wells
Author(s) -
Glanfield A. R.,
Rau G.,
Klipstein P. C.,
Smith G. W.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<269::aid-pssb269>3.0.co;2-c
Subject(s) - quantum well , exciton , condensed matter physics , spectral line , valence (chemistry) , photoluminescence , mixing (physics) , stress (linguistics) , ground state , physics , chemistry , molecular physics , atomic physics , quantum mechanics , optics , laser , linguistics , philosophy
We present spectroscopic investigations of excitonic mixing in GaAs quantum wells due to in‐plane uniaxial stress. Two unexpected anticrossings are seen in the photoreflectance spectra which cannot be explained by the effect of stress on the single particle states. The anticrossings can be ascribed to unusually strong Fano related interference between excitonic states inside the QW. This presents a new type of signature for the strong valence band mixing which gives rise to the highly non‐parabolic subband structure found in these systems. Photoluminescence spectra show clearly the non‐linear stress shift of the quantum well ground state exciton due to the competing effects of symmetry reduction and quantum confinement. The measurements are used to determine accurately the a and b deformation potentials of GaAs.