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Optical Properties of the Amorphous Semiconductor (GeS 2 ) 1—x (Bi 2 S 3 ) x System under High Pressure
Author(s) -
Onari S.,
Taniyama M.,
Kiyomoto S.,
Makino T.,
Matsuishi K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<263::aid-pssb263>3.0.co;2-#
Subject(s) - amorphous solid , absorption edge , hysteresis , materials science , analytical chemistry (journal) , band gap , absorption spectroscopy , semiconductor , void (composites) , amorphous semiconductors , spectral line , optics , condensed matter physics , chemistry , crystallography , optoelectronics , physics , chromatography , astronomy , composite material
We measured the change of the absorption spectra under high pressure to study the optical properties of the amorphous (GeS 2 ) 1— x (Bi 2 S 3 ) x system, and we also studied the change of local atomic structures under pressure with increasing Bi 2 S 3 concentration. The optical edge exhibits a red shift with increasing pressure, and depends strongly on the Bi 2 S 3 concentration. Especially for the concentration range x = 0 to 0.05, the optical gap E o decreases non‐linearly in the pressure range 2.0 to 4.0 GPa, and large hysteresis effects are observed in the GeS 2 ‐rich composition. For the concentration range 0.1 ≤ x , the optical gap E o decreases linearly with pressure, and no hysteresis effects are observed. As the existence of internal void structure is considered to be the origin of the hysteresis, it is considered that the irreversible destruction of the void structure induces the nonlinear decrease of the optical gap E o .