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GaAs/(Ordered)GaInP 2 Heterostructures under Pressure and High Magnetic Fields
Author(s) -
Zeman J.,
Martinez G.,
Yu P. Y.,
Kwok S. H.,
Uchida K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<239::aid-pssb239>3.0.co;2-o
Subject(s) - hydrostatic pressure , heterojunction , photoluminescence , magnetic field , materials science , high pressure , condensed matter physics , electron , spectral line , hydrostatic equilibrium , alloy , optoelectronics , physics , engineering physics , metallurgy , quantum mechanics , astronomy , thermodynamics
The results of extended studies of photoluminescence (PL) and up‐converted PL (UPL) of partially ordered GaInP 2 alloy layers under hydrostatic pressure and high magnetic field are presented. It appears that the efficient UPL is observed when the GaAs/GaInP 2 interface has a type II alignment. This condition can be reached also by hydrostatic pressure. Dramatic changes of the character of PL spectra measured on less ordered samples are explained by pressure and/or magnetic field induced localization of electrons in small domains in GaInP 2 nearby the interface.