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Luminescence Properties of Oxygen‐Containing Silicon Annealed at Enhanced Argon Pressure
Author(s) -
Misiuk A.,
Surma B.,
Surma B.,
Rebohle L.,
Jun J.,
Antonova I. V.,
Tyschenko I.,
RomanoRodriguez A.,
Lopez M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<233::aid-pssb233>3.0.co;2-b
Subject(s) - photoluminescence , argon , silicon , annealing (glass) , oxygen , materials science , luminescence , analytical chemistry (journal) , atmospheric pressure , ultraviolet , dislocation , partial pressure , optoelectronics , chemistry , metallurgy , composite material , oceanography , organic chemistry , chromatography , geology
The effect of annealing at argon pressure, HP, up to 1.5 GPa on photoluminescence, PL, of oxygen‐containing silicon (of Czochralski grown, Cz‐Si, and of oxygen‐implanted, Si:O) and of thermally — grown SiO 2 films was investigated. Pressure‐annealing of Cz‐Si and Si:O at 720 to 1400 K affects the intensity of dislocation‐related PL lines in the infrared, which follows from HP effect on oxygen precipitation in silicon and Si:O. For the first time visible/ultraviolet PL of the SiO 2 surface film was detected after subjecting it to pressure treatment at (1400 to 1550) K, (0.9 to 1.5) GPa.