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Decay Process of Photoluminescence in CdMnTe
Author(s) -
Nakahara J.,
Takamura K.,
Yamamoto S.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<223::aid-pssb223>3.0.co;2-f
Subject(s) - photoluminescence , excited state , photoluminescence excitation , relaxation (psychology) , excitation , spectral line , atomic physics , materials science , condensed matter physics , chemistry , physics , optoelectronics , quantum mechanics , psychology , social psychology
Photoluminescence (PL) spectra, time profiles of PL intensity and PL excitation spectra (PLE) for inter 3d multiplets (3d‐MS) transition of Mn 2+ are observed in the semimagnetic semiconductor CdMnTe under high pressures. Those of inter 3d‐MS and inter quantum levels (QL) transitions are also observed in quantum wells (CdTe/Cd 0.4 Mn 0.6 Te). The decay processes in these excited states are discussed. The decay process to the excited states of infrared photoluminescence is also discussed for various concentrations. In these excited states it is considered that large lattice relaxation is essential.