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High‐Pressure Effects in Low‐Temperature Fundamental Optical Absorption and Photoluminescence of Glassy Semiconductors
Author(s) -
Klinger M. I.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<207::aid-pssb207>3.0.co;2-7
Subject(s) - photoluminescence , materials science , semiconductor , absorption (acoustics) , arrhenius equation , amorphous semiconductors , band gap , condensed matter physics , quenching (fluorescence) , optoelectronics , activation energy , optics , chemistry , fluorescence , physics , composite material , silicon
Pronounced high‐pressure effects in the low‐temperature fundamental optical absorption and photoluminescence are theoretically predicted for glassy semiconductors. The effects are related to changes in the properties of negative‐ U centres and their excitations in the mobility gap of which the width decreases with growing pressure. As well as the optical absorption band, the photoluminescence peak is strongly enhanced and narrowed, whereas the peak energy decreases, and the anomalous “inverse‐Arrhenius” thermal quenching of the photoluminescence is suppressed at high pressure.