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Theory of Piezo‐Optical Properties for Group IV Elements and III–V Compounds
Author(s) -
Theodorou G.,
Tsegas G.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<197::aid-pssb197>3.0.co;2-c
Subject(s) - hydrostatic pressure , atomic orbital , tensor (intrinsic definition) , dielectric , group (periodic table) , dielectric function , materials science , hydrostatic equilibrium , range (aeronautics) , chemistry , computational chemistry , optoelectronics , physics , mathematics , thermodynamics , composite material , quantum mechanics , geometry , organic chemistry , electron
An empirical tight‐binding model with an orthogonal sp 3 set of orbitals is used to describe the optical properties of strained Si, Ge, GaAs and InP. The piezo‐optical tensor components P ij are calculated. The dielectric constant as a function of pressure is evaluated for hydrostatic pressures in the range of 0 to 8 GPa. The theoretically obtained results are in good agreement with existing experimental data.