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Parameters of Yb‐Induced Deep Level in Pb 1—x Ge x Te Doped with Yb
Author(s) -
Skipetrov E. P.,
Chernova N. A.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<171::aid-pssb171>3.0.co;2-7
Subject(s) - alloy , doping , materials science , ytterbium , condensed matter physics , metal–insulator transition , insulator (electricity) , metal , physics , metallurgy , composite material , optoelectronics
Abstract The effect of pressure ( P ≤ 12 × 10 8 Pa) on the galvanomagnetic properties (4.2 K ≤ T ≤ 300 K, B ≤ 7 T) of Pb 1— x Ge x Te ( x = 0.038) alloy doped with Yb has been investigated. Under pressure the insulator–metal transition and the sharp increase in the free hole concentration in the alloy were revealed. On the basis of obtained experimental results the model of reconstruction of the energy spectrum of the alloy under pressure has been proposed. In the frame of this model by comparing the theoretical and experimental pressure dependences of Fermi energy and free hole concentration the main parameters of the Yb‐induced deep level were determined.