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Comparability and Reliability of High‐Pressure Band‐Gap Data in Tetrahedral Semiconductors
Author(s) -
Frogley M. D.,
Dunstan D. J.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<17::aid-pssb17>3.0.co;2-2
Subject(s) - semiconductor , band gap , reliability (semiconductor) , tetrahedron , raman spectroscopy , materials science , computational physics , optics , chemistry , thermodynamics , physics , optoelectronics , crystallography , power (physics)
There is a wide scatter in reported measurements of the band‐gap of tetrahedral semiconductors with pressure. We show that much of this scatter is due to the use of inappropriate data analysis. Three high‐quality data sets for GaAs obtained over very different pressure ranges, and with very different reported pressure coefficients are brought into superb agreement by performing a linear fit of band‐gap against relative density, whereas fits to lattice constant, sample volume or pressure do not fully reconcile the data sets. Scatter of coefficients for other compounds is also greatly reduced by this method. In ZnTe we have measured both the Raman shift and the band‐gap energy as a function of pressure and have observed a linear relationship between the two. Significant deviation from this is then indicative of experimental error. The routine use of two spectroscopies in this way could enhance the reliability of high‐pressure experiments.