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Pressure Tuning of Many‐Electron Impurity Interactions in Confined Semiconductor Structures
Author(s) -
Tischler J. G.,
Singh S. K.,
Nickel H. A.,
Herold G. S.,
Jiang Z. X.,
McCombe B. D.,
Weinstein B. A.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<131::aid-pssb131>3.0.co;2-n
Subject(s) - electron , quantum well , condensed matter physics , filling factor , exciton , resonance (particle physics) , electron density , fermi gas , semiconductor , impurity , cyclotron resonance , singlet state , materials science , atomic physics , chemistry , molecular physics , physics , cyclotron , optics , optoelectronics , excited state , laser , organic chemistry , quantum mechanics
We report studies of the free carrier and donor‐bound FIR excitations of a confined electron gas in modulation doped GaAs/AlGaAs quantum wells (QW) as a function of the QW electron density. Applied pressure is used to tune the electron density via the Γ–X well–barrier crossover. As electrons are removed from the QWs, we observe successively the quenching of cyclotron resonance, the evolution of the D — singlet‐like magnetoplasmon resonance into the D — singlet transition of isolated donors, and the emergence of the neutral donor D 0 1s–2p + line. Calculations predict a sharp drop in the QW electron density for 2.3 to 3.1 GPa, in accordance with experiment. A rapid decrease with B ‐field in the blue shift of the magnetoplasmon resonance at 2.2 GPa in one sample shows that pressure has shifted the ν < 1 filling‐factor regime to a factor‐of‐two lower field.