Premium
X‐Ray, Raman and Photoluminescence Study of Vacancy Ordered β‐Ga 2 Se 3 under High Pressure
Author(s) -
Takumi M.,
Koshio Y.,
Nagata K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<123::aid-pssb123>3.0.co;2-j
Subject(s) - raman spectroscopy , photoluminescence , raman scattering , diamond anvil cell , rietveld refinement , band gap , vacancy defect , materials science , analytical chemistry (journal) , chemistry , diffraction , molecular physics , crystal structure , optics , crystallography , optoelectronics , physics , chromatography
The effect of pressure on the structure and optical properties of vacancy‐ordered β‐Ga 2 Se 3 has been investigated by X‐ray diffraction, Raman and photoluminescence spectroscopies using diamond anvil cell. From the shift of the photoluminescence peak with pressure, the pressure dependence of the band gap energy (d E g /d P ) is derived to be 46 meV/GPa. From Rietveld analysis, the pressure dependencies of the lattice parameters and the atomic positions are obtained. The relation between these crystal data and the pressure dependence of the band gap energy is discussed. From the X‐ray measurements, a structural phase transition at 14 GPa is observed, as is observed in α‐Ga 2 Se 3 . In the Raman scattering measurement, pressure‐tuned resonant phenomenon is observed near 2.5 GPa, where the band gap energy of β‐Ga 2 Se 3 coincides with the photon energy of the argon ion laser (λ = 514.5 nm) used for Raman measurement as excitation light.