Premium
Band‐to‐Band and Band‐to‐Acceptor Photoluminescence Studies in InSe under Pressure
Author(s) -
Manjón F. J.,
van de Vijver Y.,
Segura A.,
Muñoz V.,
Liu Z. X.,
Ulrich C.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199901)211:1<105::aid-pssb105>3.0.co;2-j
Subject(s) - photoluminescence , doping , acceptor , band gap , materials science , semiconductor , effective mass (spring–mass system) , condensed matter physics , ionization , electronic band structure , ionization energy , optoelectronics , chemistry , physics , ion , organic chemistry , quantum mechanics
We report on photoluminescence (PL) measurements under pressure on p‐type N‐doped InSe at 10 K and on n‐type Si‐doped InSe at room temperature. Low‐temperature PL of N‐doped InSe is dominated by a band‐to‐acceptor peak. From the pressure dependence of the ionization energy of the N related shallow acceptor, the pressure change of the hole effective mass is estimated through the Gerlach‐Pollmann model for hydrogenic levels in uniaxial crystals and discussed in the framework of a k · p model. Room temperature PL in Si‐doped InSe is dominated by a band‐to‐band peak exhibiting a pressure shift in agreement with previous works. This PL peak has been measured up to 7 GPa and a steep reversible decrease of its intensity has been observed above 4 GPa. This decrease has been interpreted as a supplementary evidence of a direct‐to‐indirect gap crossover, already observed in other layered semiconductors.