Premium
Effective Mass Calculation of the Shallow Acceptor Ground State g‐Factor for A 3 B 5 Semiconductors
Author(s) -
Malyshev A.V.,
Merkulov I.A.,
Rodina A.V.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<865::aid-pssb865>3.0.co;2-1
Subject(s) - spin–orbit interaction , effective mass (spring–mass system) , acceptor , ground state , semiconductor , radius , condensed matter physics , tensor (intrinsic definition) , physics , spin (aerodynamics) , coupling (piping) , zero (linguistics) , limiting , atomic physics , computational physics , materials science , quantum mechanics , mathematics , geometry , thermodynamics , mechanical engineering , linguistics , philosophy , computer security , computer science , engineering , metallurgy
Effective mass calculation of the acceptor ground state g ‐factor is presented for two limiting cases: infinite and zero spin–orbit coupling. Simple analytical expressions for the g ‐values are obtained within the framework of the zero‐radius potential model. These results are in good agreement with experimental data for GaAs. Analytical expressions for the tensor g ‐factor are presented for strained wide‐bandgap semiconductors with weak spin–orbit interaction (such as GaN). These results can be used for qualitative analysis of ODMR and ESR experimental data.