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Far‐Infrared Active Media Based on Shallow Impurity State Transitions in Silicon
Author(s) -
Orlova E.E.,
Zhukavin R.Ch.,
Pavlov S.G.,
Shastin V.N.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<859::aid-pssb859>3.0.co;2-q
Subject(s) - impurity , shallow donor , photoionization , phonon , silicon , relaxation (psychology) , materials science , excited state , laser , optical pumping , atomic physics , condensed matter physics , optoelectronics , physics , optics , ionization , ion , social psychology , psychology , quantum mechanics
Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping have been proposed and analyzed, using a procedure allowing to reduce the number of required matrix elements of transitions. The first mechanism is based on the resonance interaction of the 2p 0 state in Si:Bi with optical phonons. The other one is based on the suppression of acoustic‐phonon‐assisted relaxation from the 2p 0 state in Si:P due to the momentum conservation law. Spontaneous emission was registered from shallow donors in Si:P under photoionization by a CO 2 laser. The dependence of the spontaneous emission intensity on the intensity of pumping radiation confirms the possibility of amplification on impurity transitions.