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Landau Level Quantization Measured by Scanning Tunneling Spectroscopy on n‐InAs(110)
Author(s) -
Morgenstern M.,
Dombrowski R.,
Wittneven Chr.,
Wiesendanger R.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<845::aid-pssb845>3.0.co;2-9
Subject(s) - landau quantization , condensed matter physics , scanning tunneling spectroscopy , scanning tunneling microscope , spectroscopy , magnetic field , quantum tunnelling , effective mass (spring–mass system) , quantization (signal processing) , dopant , spin polarized scanning tunneling microscopy , conduction band , materials science , physics , electron , chemistry , doping , quantum mechanics , computer science , computer vision
The in‐situ cleaved n‐InAs(110) surface is studied by low temperature scanning tunneling spectroscopy and microscopy in magnetic fields up to 6 T perpendicular to the surface. The d I /d V ( V ) curves exhibit characteristic oscillations in magnetic field, which are attributed to Landau levels in the conduction band. The energy dependence of the effective electron mass is determined. Dopants reduce the Landau level energy. As expected, the energy reduction decreases with increasing Landau level number.