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Dissipative Tunnelling of Charge Carriers from Shallow Impurities
Author(s) -
Dargys A.,
Žurauskienė N.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<835::aid-pssb835>3.0.co;2-d
Subject(s) - quantum tunnelling , impurity , excited state , shallow donor , condensed matter physics , charge carrier , phonon , materials science , dissipative system , ionization , atomic physics , physics , doping , ion , quantum mechanics
Experimental results on field ionization of shallow impurities in GaAs:Be and Ge:Sb,P are presented. In both materials enhacement of the impurity‐to‐band tunnelling rate was observed when lattice temperature was raised. Acoustic phonon‐assisted and ‐activated tunnelling mechanisms are employed to explain the observed results. In case of activated tunnelling the importance of excited impurity states in the field ionization is emphasized. The role of heavy and light hole masses in an acceptor‐to‐valence band tunnelling process is discussed, too.