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Magneto‐Spectroscopy of Beryllium Impurity in Gallium Arsenide
Author(s) -
Lewis R.A.,
Henini M.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<821::aid-pssb821>3.0.co;2-x
Subject(s) - beryllium , impurity , gallium arsenide , molecular beam epitaxy , spectroscopy , materials science , excited state , gallium , ground state , atomic physics , condensed matter physics , optoelectronics , chemistry , epitaxy , physics , nanotechnology , metallurgy , organic chemistry , layer (electronics) , quantum mechanics
Detailed information on the impurity system GaAs:Be has been obtained by carrying out far‐infrared spectroscopy in a magnetic field on high‐quality samples grown by molecular‐beam epitaxy. The g ‐factors of the ground state and of one excited state have been determined.