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Long‐Living Excited State of the Te Donor in GaP
Author(s) -
Pokrovskii Ya.E.,
Altukhov I.V.,
Smirnova O.I.,
Khvalkovskii N.A.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<809::aid-pssb809>3.0.co;2-9
Subject(s) - excited state , photoconductivity , atomic physics , relaxation (psychology) , atmospheric temperature range , photon energy , excitation , doping , microwave , absorption (acoustics) , range (aeronautics) , electron , chemistry , electric field , materials science , analytical chemistry (journal) , photon , optoelectronics , physics , optics , psychology , social psychology , quantum mechanics , meteorology , composite material , chromatography
The kinetics and temperature dependences (5 to 50 K) of the extrinsic photoconductivity (PC) in microwave (MCW) and DC electric fields in GaP doped with Te ( 2 × 10 17 cm −3 ) have been studied. A slow relaxation (≈10 −2 s) of MCW PC, in contrast to a fast DC PC relaxation was observed at 5 K. The steady‐state MCW PC exceeded the DC PC by 2 to 3 orders of magnitude at 5 to 16 K, and dropped by subsequent increase of temperature to 35 K. In the same temperature range a slow relaxation of absorption of the room‐temperature background radiation, induced by GaP excitation was observed. In the range 45 to 90 meV it increased, but decreased in the higher photon energy range. The obtained results are explained by accumulation of nonequilibrium electrons in the long‐living excited state 1S(Γ3) of the Te donor in GaP.