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The Shallow Acceptor Eigenstates and Spin‐Hamiltonian in GaAs‐Type Semiconductors
Author(s) -
Linnik T.L.,
Sheka V.I.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<801::aid-pssb801>3.0.co;2-4
Subject(s) - acceptor , hamiltonian (control theory) , wave function , ground state , physics , semiconductor , eigenvalues and eigenvectors , dipole , effective mass (spring–mass system) , quantum mechanics , radius , spin (aerodynamics) , condensed matter physics , atomic physics , mathematics , mathematical optimization , computer security , computer science , thermodynamics
In cubic semiconductors the light hole and heavy hole masses ratio is small. That is why there were some attempts to describe these crystals by the model of zero light hole mass. But in all papers investigations were limited by the ground state. We took a more general approach which yields an exact analytical solution for all acceptor states and establishes that the acceptor wave functions have some features at large radius. For example, the ground state wave function behaves predominantly as the d‐like hydrogen function. This method is also suitable for a theory of the more actual case of the arbitrary mass ratio. We have adopted it also to electric‐dipole spin resonance in GaAs with Mn ions being acceptors.