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Mechanism of Defect Formation Process in Electron‐Irradiated Pb 1—x Sn x Se Alloys with Inverse Band Structure
Author(s) -
Skipetrov E.P.,
Zvereva E.A.,
Kovalev B.B.,
Mousalitin A.M.,
Skipetrova L.A.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<797::aid-pssb797>3.0.co;2-m
Subject(s) - irradiation , electron , radiation , materials science , flux (metallurgy) , kinetics , electron beam processing , crystallographic defect , molecular physics , inverse , atomic physics , chemical physics , crystallography , chemistry , optics , physics , nuclear physics , metallurgy , quantum mechanics , geometry , mathematics
Abstract The kinetics of the electron concentration variation in n‐Pb 1— x Sn x Se ( x = 0.20, 0.25) alloys irradiated with electrons was investigated. By comparing theoretical and experimental dependences of the electron concentration on the radiation flux the main parameters of the defect formation process were determined assuming that the radiation defect introduction rate decreases exponentially with an increase in radiation flux. A model was proposed according to which the major mechanism of defect formation process is the generation of complexes including the primary radiation defects and the intrinsic structure defects typical of initial crystals.