Premium
Exchange‐Correlation Effects on a Multicomponent Isotropic Hole Gas in Semiconductors
Author(s) -
Beliaev D.,
Scolfaro L.M.R.,
Leite J.R.,
Sipahi G.M.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<777::aid-pssb777>3.0.co;2-u
Subject(s) - homogeneous , semiconductor , isotropy , exchange interaction , condensed matter physics , diamond , physics , spin (aerodynamics) , materials science , optics , thermodynamics , quantum mechanics , ferromagnetism , composite material
A method to calculate the exchange‐correlation potential for the homogeneous and inhomogeneous heavy and light hole gases is described. We present the results for the homogeneous hole gas of the diamond and zincblende type semiconductors. Due to the spin‐mixed character of hole states, the exchange interaction also takes place between holes of different types. The exchange potentials depend on the mixture ratio between heavy and light holes. We study a decomposition of the exchange potentials into two parts representing the interaction between the holes of different types and the interaction between the holes of the same type. Exchange potentials of heavy holes are plotted versus heavy hole densities for various light hole concentrations.