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Role of Shallow Bound States in Emission Processes of Rare‐Earth Doped Semiconductors
Author(s) -
Gregorkiewicz T.,
Thao D.T.X.,
Langer J.M.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<737::aid-pssb737>3.0.co;2-9
Subject(s) - photoluminescence , auger , excitation , semiconductor , doping , ion , rare earth , chemical physics , atomic physics , chemistry , energy transfer , materials science , condensed matter physics , mineralogy , physics , optoelectronics , organic chemistry , quantum mechanics
Participation of shallow states in the energy transfer processes between the rare‐earth ions and a host semiconductor matrix is discussed. It is argued that shallow levels link the atomic‐like states of the inner core of the rare‐earth ion with the band structure of the host crystal. For the two most investigated systems InP:Yb and Si:Er the important role of these states at various stages of excitation and de‐excitation mechanisms is shown. Models of the energy transfer process with a formation of a shallow intermediate state are discussed. It is shown that the formation of such a state is essential for the RE ion core activation. Experimental results supporting the involvement of shallow states are reviewed. Temperature dependencies of the photoluminescence activation and decay time constants are presented; these show an important role of shallow doping in the activation of Auger processes relevant to the mechanism of rare‐earth ion photoluminescence. For the Si:Er system direct evidence for the two‐stage excitation mechanism is discussed.