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Theoretical Calculations of Shallow Acceptor States in Strained Quantum Well Structures
Author(s) -
Zhao Q.X.,
Holtz P.O.,
Willander M.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<693::aid-pssb693>3.0.co;2-5
Subject(s) - acceptor , excited state , oscillator strength , absorption spectroscopy , atomic physics , quantum well , valence (chemistry) , dielectric , chemistry , spectral line , molecular physics , materials science , condensed matter physics , physics , optoelectronics , optics , quantum mechanics , laser , organic chemistry
Acceptors confined in strained In x Ga 1— x As/Al 0.3 Ga 0.7 As quantum well (QW) structures are theoretically investigated. The impurity states are calculated using a four‐band effective‐mass theory, in which the valence‐band mixing as well as the mismatch of the band parameters and the dielectric constants between well and barrier materials have been taken into account. The binding energies of acceptors and the oscillator strengths of the active infrared electronic transitions between the acceptor ground states and the different excited p‐like states are calculated with different indium fractions x and different well widths. The results show clearly, that a built‐in strain strongly influences the transition energies and the relative oscillator strengths. Due to the splitting of the acceptor ground states, the absorption spectra of the acceptors also show a strong temperature dependence. The calculated spectra of the acceptor electronic transitions are ready to be compared with the infrared absorption measurements.