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Influence of Donor Impurity on Optical Transitions in Quantum Dots
Author(s) -
Szafran B.,
Adamowski J.,
Bednarek S.,
Stébé B.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<677::aid-pssb677>3.0.co;2-y
Subject(s) - electron , quantum dot , dipole , impurity , atomic physics , physics , center (category theory) , semiconductor , range (aeronautics) , condensed matter physics , chemistry , quantum mechanics , materials science , crystallography , composite material
Abstract Few‐electron systems have been studied by variational means for semiconductor spherical quantum dots both with and without a donor center. It is shown that the pair (2e) and triple (3e) of electrons as well as the donor center with two (D − ) and three (D 2− ) electrons can form several bound states if the range and depth of the confinement potential are sufficiently large. It is found that dipole‐allowed optical‐transition energies are nearly the same for the two groups of systems: {D 0 and D − } and {1e, 2e, 3e, and D 2− }. For D 0 and D − , the transition energies are significantly larger than for the systems of the second group.