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Shallow Acceptor States in SiGe Quantum Wells
Author(s) -
Kagan M.S.,
Altukhov I.V.,
Korolev K.A.,
Orlov D.V.,
Sinis V.P.,
Schmalz K.,
Thomas S.G.,
Wang K.L.,
Yassievich I.N.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<667::aid-pssb667>3.0.co;2-1
Subject(s) - quantum tunnelling , acceptor , condensed matter physics , doping , quantum well , materials science , valence (chemistry) , excitation , conductivity , valence band , band gap , chemistry , physics , laser , organic chemistry , quantum mechanics , optics
The temperature dependences of conductivity and hole mobility in boron doped SiGe quantum well structures were studied. The conductivity at low temperatures is shown to be due to hopping over neutral B centers while at higher temperatures, it is due to two‐stage excitation including thermal activation of holes from the ground to strain‐split B states following by hole tunneling into the valence band.