Premium
Optical Absorption Lines Due to H 2 ‐Related Defects in Si
Author(s) -
Takahashi H.,
Fukata H.,
Suezawa M.,
YamadaKaneta H.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<581::aid-pssb581>3.0.co;2-l
Subject(s) - absorption (acoustics) , irradiation , hydrogen , absorption spectroscopy , analytical chemistry (journal) , materials science , neutron , doping , annealing (glass) , spectral line , atomic physics , chemistry , optics , optoelectronics , physics , nuclear physics , organic chemistry , chromatography , astronomy , composite material
Optical absorption spectra of hydrogen (H)‐doped Si crystals were studied to clarify the hydrogenrelated optical absorption peaks. Hydrogen was doped in Si crystals by annealing them in a hydrogen atmosphere at 1200 °C followed by quenching. Some specimens were irradiated with high energy electrons (3 MeV) or neutrons. Some specimens were treated with atomic hydrogen. Their optical absorption spectra were measured at about 7 K with an FT‐IR spectrometer. In accordance with Pritchard et al. an absorption peak was observed at 3618 cm −1 in H‐doped specimens. Its intensity became weaker after electron or neutron irradiation. Instead, many absorption peaks appeared around 2000 cm −1 and an absorption peak appeared at 3942 cm −1 . The responsible defect for the latter peak does not include H. Many absorption peaks around 2000 cm −1 were compared with those observed in proton‐implanted Si.