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Lattice Defects in Undoped CdAs 2 Monocrystals
Author(s) -
Marenkin S.F.,
Morozova V.A.,
Koshelev O.G.,
Biskupski G.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<569::aid-pssb569>3.0.co;2-y
Subject(s) - photoconductivity , absorption edge , materials science , lattice (music) , atom (system on chip) , spectral line , absorption spectroscopy , absorption (acoustics) , condensed matter physics , enhanced data rates for gsm evolution , atomic physics , molecular physics , crystallography , chemistry , optics , optoelectronics , band gap , physics , telecommunications , astronomy , computer science , acoustics , composite material , embedded system
The spectra of optical absorption and photoconductivity of perfect CdAs 2 single crystals were investigated near the intrinsic edge and in the extrinsic absorption region. The existence of three donor levels created by structural defects is established. The mechanism of defect formation is suggested: the interstitial Cd i atom in different charge states created the ε 1 < 0.02 eV and ε 3 ≅ 0.42 eV levels, the As v vacancies created the ε 2 ≅ 0.26 eV level.