Premium
Annihilation Studies of Oxygen‐Related New Donors in Cz‐Si
Author(s) -
Karg D.,
Voigt A.,
Pensl G.,
Schulz M.,
Strunk H.P.,
Zulehner W.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<533::aid-pssb533>3.0.co;2-x
Subject(s) - annihilation , oxygen , annealing (glass) , activation energy , kinetics , thermal , atomic physics , positron annihilation , materials science , chemistry , nuclear physics , physics , thermodynamics , metallurgy , positron , quantum mechanics , organic chemistry , electron
The annihilation kinetics of new oxygen donors (NDs) has been studied. The ND and interstitial oxygen concentration as well as the energy distribution of ND states are determined subsequent to annealing steps with various duration (2 s to 250 h) and at temperatures ranging from 875 to 1025 °C. The annihilation occurs in two steps: At the temperatures used, energetically shallow ND states ( E C — E ≤ 0.1 eV) annihilate within 15 min, while the deeper ND states require annealing times up to 250 h. The thermal activation energy Δ E A for the annihilation of shallow ND states is determined to be equal to (3.03 ± 0.20) eV.