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Shallow Thermal Donors in Silicon: The Roles of Al, H, N, and Point Defects
Author(s) -
Newman R.C.,
Ashwin M.J.,
Pritchard R.E.,
Tucker J.H.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<519::aid-pssb519>3.0.co;2-h
Subject(s) - silicon , impurity , crystallographic defect , vacancy defect , shallow donor , materials science , doping , atom (system on chip) , fourier transform infrared spectroscopy , annealing (glass) , irradiation , thermal , crystallography , hydrogen , analytical chemistry (journal) , chemistry , metallurgy , optoelectronics , optics , physics , nuclear physics , chromatography , meteorology , computer science , embedded system , organic chemistry
Three families of shallow thermal donors have been identified in annealed Czochralski silicon from measurements of their infrared electronic transitions using Fourier transform spectroscopy. Donors produced in Al‐doped Si incorporate an Al impurity; centers produced in hydrogenated material contain an H (or D) atom; a third set of donors labeled STD(X) N produced in nitridated or irradiated pre‐hydrogenated samples may incorporate a lattice vacancy rather than a nitrogen atom. A critical review of the literature is made and some rationalization has been effected. Comments are included about the formation of donor centers following anneals of heavily damaged float‐zone Si that also contains hydrogen.