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Selection Rules for Optical Transitions Involving Impurities and Defects in Hexagonal GaN
Author(s) -
Tronc P.,
Kitaev Yu.E.,
Wang G.,
Limonov M.F.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<471::aid-pssb471>3.0.co;2-t
Subject(s) - impurity , selection (genetic algorithm) , condensed matter physics , perpendicular , symmetry (geometry) , hexagonal crystal system , exciton , bound state , spin (aerodynamics) , electron , physics , crystallography , chemistry , quantum mechanics , mathematics , geometry , computer science , artificial intelligence , thermodynamics
We have performed a complete group‐theoretical analysis of state symmetries for electrons and excitons bound to impurities or defects in hexagonal GaN. The spin–orbit interaction has been taken into account. The selection rules for the optical transitions involving bound states have been established. Transitions with light polarized along and perpendicular to the symmetry axis, respectively, are shown to generally obey different selection rules.