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Photoluminescence Studies of Mg‐Doped and Si‐Doped Gallium Nitride Epilayers
Author(s) -
Hess S.,
Taylor R.A.,
Ryan J.F.,
Cain N.J.,
Roberts V.,
Roberts J.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<465::aid-pssb465>3.0.co;2-h
Subject(s) - photoluminescence , doping , exciton , luminescence , materials science , gallium , gallium nitride , shallow donor , spontaneous emission , acceptor , trapping , recombination , optoelectronics , wide bandgap semiconductor , analytical chemistry (journal) , condensed matter physics , optics , chemistry , nanotechnology , physics , laser , ecology , biochemistry , layer (electronics) , chromatography , gene , metallurgy , biology
We present time‐, temperature‐ and intensity‐dependent photoluminescence measurements of undoped, n‐type and p‐type GaN epilayers. In the nominally undoped samples we observe at low temperatures the trapping of free excitons by neutral donors and subsequent radiative recombination. In the n‐type Si‐doped samples bound‐exciton luminescence is dominant over a wide range of temperatures. The luminescence from p‐type Mg‐doped samples is dominated by shallow‐donor–shallow‐acceptor pair recombination and by a deep blue centres at 3.0 eV. These two emission bands show identical temperature and linear intensity dependence.