Premium
Doping of Homoepitaxial GaN Layers
Author(s) -
Prystawko P.,
Leszczynski M.,
Beaumont B.,
Gibart P.,
Frayssinet E.,
Knap W.,
Wisniewski P.,
Bockowski M.,
Suski T.,
Porowski S.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<437::aid-pssb437>3.0.co;2-l
Subject(s) - photoluminescence , materials science , chemical vapor deposition , doping , silicon , gallium , gallium nitride , hydrostatic pressure , optoelectronics , nanotechnology , layer (electronics) , physics , metallurgy , thermodynamics
Gallium nitride doped with oxygen (unintentionally), silicon and magnesium was grown by metalorganic chemical vapor deposition on the conductive single crystals of GaN grown at high hydrostatic pressure. The layers were examined using X‐ray diffraction, photoluminescence and far‐infrared reflectivity. It was found that the incorporation of silicon depends on the side used for deposition. For the two Si‐doped layers grown in the same run, the one grown on the (00.1) side (gallium‐terminated) had always smaller free electron concentration with respect to the (00._1) side (nitrogen‐terminated). This conclusion could be drawn from the lattice expansion by free electrons, the photoluminescence peak shift by Burstein‐Moss effect and the position of plasma edge in far‐infrared reflectivity.