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Mobility, Passivating Effect and Thermal Stability of Hydrogen in Silicon Carbide
Author(s) -
Achtziger N.,
Hülsen C.,
Witthuhn W.,
Linnarsson M.K.,
Janson M.,
Svensson B.G.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<395::aid-pssb395>3.0.co;2-9
Subject(s) - silicon carbide , hydrogen , materials science , annealing (glass) , schottky diode , secondary ion mass spectrometry , ion implantation , diode , ion , silicon , analytical chemistry (journal) , optoelectronics , wide bandgap semiconductor , chemistry , metallurgy , organic chemistry , chromatography
Abstract The diffusion and passivating effect of hydrogen (isotope 2 H) in epitaxial p‐type SiC is studied by secondary ion mass spectrometry and capacitance–voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low‐energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated acceptors and a H + ion drift at a surprisingly low temperature of 530 K.