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Raman Scattering at Shallow Acceptors in InP
Author(s) -
Irmer G.,
Wenzel M.,
Monecke J.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<347::aid-pssb347>3.0.co;2-l
Subject(s) - acceptor , raman scattering , merge (version control) , excited state , doping , raman spectroscopy , scattering , materials science , analytical chemistry (journal) , chemistry , atomic physics , optoelectronics , optics , condensed matter physics , physics , chromatography , computer science , information retrieval
Electronic Raman scattering was used to investigate excited states of shallow acceptors in Zn‐ and in Cd‐doped p‐type InP with acceptor concentrations in the range between 10 16 cm −3 and 10 18 cm −3 . Well resolved transition lines were obtained for acceptor concentrations of about 10 17 cm −3 (Zn‐doped) and 5 × 10 17 cm −3 (Cd‐doped), at higher concentrations the levels merge into broad bands. A linear correlation between the normalized intensity of the electronic spectrum and the acceptor concentration was found. The measured acceptor energy levels were used to prove which sets of published Luttinger parameters γ 1 , γ 2 and γ 3 are compatible with our results.