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Internal Transitions of Neutral and Charged Magneto‐Excitons in GaAs/AlGaAs Quantum Wells
Author(s) -
Nickel H.A.,
Herold G.S.,
Yeo T.,
Kioseoglou G.,
Jiang Z.X.,
McCombe B.D.,
Petrou A.,
Broido D.,
Schaff W.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<341::aid-pssb341>3.0.co;2-8
Subject(s) - exciton , condensed matter physics , spectroscopy , quantum well , electron , degeneracy (biology) , doping , atomic physics , symmetry (geometry) , radiative transfer , magnetic field , physics , materials science , chemistry , optics , laser , bioinformatics , geometry , mathematics , quantum mechanics , biology
We have used Optically Detected Resonance (ODR) spectroscopy to probe the electronic properties of undoped and barrier‐doped GaAs/Al 0.3 Ga 0.7 As multiple‐quantum‐well (MQW) samples with well widths between 12.5 and 20 nm in magnetic fields up to 15 T at low temperatures. The simultaneous observation of electron and hole CR along with several internal transitions of neutral excitons (IETs) verifies the symmetry‐related energy differences of the internal transitions to differences between electron and hole CR. The observed degeneracy of the 1s → 2p + IET from the two radiative magneto‐excitons is due to the very small electron g ‐factor. ODR measurements on 20 nm wide MQWs (not‐intentionally‐ and barrier‐doped) exhibit transitions of the negatively charged excitonic complex.