Premium
New Complex Defect in Heavily Doped GaAs:Zn Grown by Liquid Phase Epitaxy
Author(s) -
Shamirzaev T.S.,
Zhuravlev K.S.,
Yakusheva N.A.,
Petrenko I.P.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<317::aid-pssb317>3.0.co;2-x
Subject(s) - photoluminescence , epitaxy , materials science , doping , gallium , bismuth , liquid phase , phase (matter) , spectral line , optoelectronics , crystallographic defect , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , metallurgy , layer (electronics) , physics , organic chemistry , chromatography , astronomy , thermodynamics
The photoluminescence properties of heavily doped GaAs:Zn (100) layers grown by liquid phase epitaxy from gallium and bismuth solutions at various temperatures have been studied. It was shown that a line at 1.35 eV connected with the novel defect appears in photoluminescence spectra of the layers doped at a level above 10 19 cm −3 . It has been found that the defect is a neutral complex consisting of native point defects of GaAs.