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Magnesium–Oxygen Complex Impurities in Silicon
Author(s) -
Ho L.T.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<313::aid-pssb313>3.0.co;2-c
Subject(s) - magnesium , silicon , impurity , oxygen , chemistry , diffusion , materials science , inorganic chemistry , metallurgy , physics , organic chemistry , thermodynamics
Magnesium has been introduced into silicon containing oxygen by diffusion. The low‐temperature absorption spectrum observed clearly demonstrates that magnesium can pair with oxygen to form magnesium–oxygen complex impurities in silicon. Similar to an isolated magnesium donor, the magnesium–oxygen complex is also an interstitial donor in silicon. The ionization energy of neutral magnesium–oxygen complex donor is 124.66 meV, which indicates that it is a slightly deeper donor compared with neutral magnesium impurity in silicon.