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Metal–Insulator Transition Induced by Shallow Donor Impurity in n‐ZnSe
Author(s) -
Nedeoglo D.D.,
Kasiyan V.A.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<301::aid-pssb301>3.0.co;2-o
Subject(s) - impurity , thermal conduction , condensed matter physics , activation energy , dielectric , metal–insulator transition , electrical resistivity and conductivity , materials science , shallow donor , conduction band , metal , transition metal , electron , chemistry , optoelectronics , physics , organic chemistry , biochemistry , catalysis , quantum mechanics , metallurgy , composite material
The resistivity and Hall coefficient of n‐ZnSe monocrystals were investigated in the region of the metal–insulator (M–I) transition induced by variation of shallow donor impurity Al concentration from 2 × 10 16 to 2 × 10 18 cm −3 . It has been found that the transition from an activated conduction to a metallic one occurs at donor concentration 1.3 × 10 17 cm −3 and takes place within the impurity band before it merges with the bottom of conduction band. On the dielectric side of the M–I transition the conduction with an activation energy ε 1 induced by electron excitation from the impurity states into the conduction band is replaced by the hopping conduction with a constant activation energy ε 3 which, in the lowest temperature region, is changed to a hopping conduction with variable activation energy.