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Ytterbium‐Induced Impurity States and Insulator–Metal Transition under Pressure in Pb 1–x Ge x Te Alloys
Author(s) -
Skipetrov E.P.,
Chernova N.A.,
Slynko E.I.,
Vygranenko Yu.K.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199812)210:2<289::aid-pssb289>3.0.co;2-1
Subject(s) - impurity , ytterbium , hydrostatic pressure , materials science , condensed matter physics , metal–insulator transition , metal , electrical resistivity and conductivity , valence (chemistry) , atmospheric pressure , doping , conductivity , hall effect , chemistry , thermodynamics , physics , metallurgy , organic chemistry , quantum mechanics , meteorology
Abstract In this paper the temperature dependences of resistivity ρ and Hall constant R H of Pb 1— x Ge x Te ( x ≤ 0.04) doped with Yb were investigated both under atmospheric pressure and under hydrostatic compression. It was shown that the ρ(1/ T ) dependences revealed low temperature activation regions of impurity conductivity, indicating the formation of impurity states near the valence band top. Under pressure the slope of the activation regions decreases and insulator–metal transition occurs. On the base of the obtained results a reconstruction diagram of the energy spectrum of Pb 1— x Ge x Te〈Yb〉 under pressure was proposed and the main parameters of the Yb‐induced level were estimated.