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Mutual Hot‐Phonon Effects in Coupled GaAs Quantum Wires
Author(s) -
Paulavičius G.,
Mickevičius R.,
Mitin V.,
Kochelap V.,
Stroscio M.A.,
Jafrate G.J.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199811)210:1<87::aid-pssb87>3.0.co;2-o
Subject(s) - condensed matter physics , phonon , electron , electric field , quantum wire , drift velocity , physics , quantum dot , electron mobility , materials science , optoelectronics , quantum mechanics
Hot phonon effects on electron transport in coupled GaAs quantum wires embedded in AlAs have been investigated by a self‐consistent Monte Carlo simulation. These results take into account optical phonon confinement within the GaAs region and localization at its boundaries which is caused by the presence of GaAs/AlAs heterointerfaces. Electrical confinement of electrons in several spatially separated quantum wire channels inside the GaAs region with common optical phonons (confined within the whole GaAs bar) is assumed. We have investigated numerically mutual interaction of electrons and phonons over a wide range of electric fields (0 < E < 1000 V/cm) and lattice temperatures (30 K ≤ T ≤ 300 K). We demonstrate that in a system of two quantum wires coupled through the common confined optical phonons, electron transport in one wire significantly affects electron transport in the second wire due to the presence of the strong mutual hot‐phonon drag between these electron channels. This leads to a sufficient modification of the carrier velocity–field characteristics in the structures investigated.