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Hole Mobility in Cr‐Doped p‐Type β‐FeSi 2 Single Crystals
Author(s) -
Arushanov E.,
Tomm Y.,
Ivanenko L.,
Lange H.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199811)210:1<187::aid-pssb187>3.0.co;2-f
Subject(s) - scattering , acceptor , impurity , valence band , doping , condensed matter physics , valence (chemistry) , phonon scattering , electron mobility , polar , materials science , phonon , hall effect , chemistry , optics , physics , electrical resistivity and conductivity , band gap , organic chemistry , quantum mechanics , astronomy
The analysis of mobility in Cr‐doped p‐type β‐FeSi 2 single crystals is performed taking into account acoustic, non‐polar and polar optical phonon scattering, scattering by ionised impurities and space charge scattering. The dominant scattering mechanisms are determined. The value of the valence band deformation potential is estimated. The temperature dependence of the Hall coefficient is explained in the limit of a two acceptor–one donor model. The value of the activation energy of the deep acceptors, the concentration of the shallow and deep acceptors as well as the concentration of the compensating donors were estimated.