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Thickness Dependence of Galvanomagnetic Properties in a Very Thin Slab
Author(s) -
Nam S. W.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199810)209:2<329::aid-pssb329>3.0.co;2-h
Subject(s) - slab , condensed matter physics , impurity , scattering , boltzmann equation , boltzmann constant , charge carrier , amplitude , physics , materials science , optics , quantum mechanics , geophysics
The thickness dependence of the magnetoresistance and the Hall constant is obtained in the two‐band model with compensating charge carriers by using a specific perturbation formalism for quasi‐two‐dimensional systems. Screened impurity scattering is considered within the Boltzmann kinetic equation scheme, and the relaxation time is evaluated as a function of thickness through the scattering amplitude in the perturbation formulation. The relaxation time is not a simple linear function of thickness of the slab. The charge density and the effective masses are important parameters for the thickness dependence. The transport is also verified to be sensitive to the position of the impurity in the slab.