Premium
Interface Roughness Fractality Effects on the Electron Mobility in Semiconducting Quantum Wells
Author(s) -
Palasantzas G.,
Barnaś J.,
Geerligs L. J.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199810)209:2<319::aid-pssb319>3.0.co;2-l
Subject(s) - condensed matter physics , surface finish , electron , scattering , quantum well , surface roughness , fractal , electron mobility , electron density , exponent , materials science , physics , optics , quantum mechanics , mathematics , mathematical analysis , laser , linguistics , philosophy , composite material
The influence of interface electron scattering on electron mobility in semiconducting quantum wells is analyzed theoretically in the Born approximation. The interface roughness is assumed to be random self‐affine fractal characterized by roughness exponent H , correlation length ξ, and rms amplitude Δ. In particular, the ratio of electron mobilities for the Fermi level slightly above and below the second miniband edge (or for the well width above and below a critical width d c for a constant areal electron density) is calculated. It is shown that the correlation length ξ and roughness exponent H have pronounced effects on electron mobility.