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Energy Loss Rate of Hot Electrons Due to Confined and Interface Optical Phonons in Semiconductor Quantum Wells in Quantizing Magnetic Field
Author(s) -
Bhat J. S.,
Kapatkar S. B.,
Kubakaddi S. S.,
Mulimani B. G.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199809)209:1<37::aid-pssb37>3.0.co;2-n
Subject(s) - condensed matter physics , phonon , quantum well , electron , magnetic field , semiconductor , physics , relaxation (psychology) , slab , field (mathematics) , quantum mechanics , psychology , social psychology , laser , mathematics , geophysics , pure mathematics
Abstract The energy loss rate (ELR) of hot electrons in semiconductor quantum wells in quantizing magnetic field is studied using the electron temperature model. Electron interaction with confined LO phonons described by Huang and Zhu, slab mode and guided mode models is considered. The effect of interface modes is also incorporated. Numerical results are given for the GaAs/AlAs quantum well system for the dependence of ELR on magnetic field, electron temperature and the effect of quantum well barrier height. The results are compared with those obtained with the bulk description of LO phonons. The energy relaxation process is dominated by interface modes at lower well widths and by confined modes at higher well widths.